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| Academic Year | 2008 |
|---|---|
| Category of Thesis | Conference paper |
| Title of paper | Analysis Capacitance Characteristics of Step Doping Low-Temperature Poly-Si Lateral Double Diffusion metal Oxide Semiconductor Transistors |
| Titles of conference | 2008 International Electron Devices and Materials Symposia |
| Start from | 2008-11-05 |
| End | 2008-11-05 |
| Year of publication | 2008 |
| Chinese name | Jyh-Ling Lin |
| English name | Jyh-Ling Lin |
| Authors | Y. C. Lee, P. J. Su, and J. L. Lin |
| Number of authors | 3 |
| 作者型態 | Corresponding Author |
| Location or Place location of meeting | Taichung, Taiwan |
| Language | 英文 |
