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Academic Year | 2012 |
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Journal Ranking | SCI |
Title of paper | Design, Simulation and Fabrication of metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with New Termination Structure |
Journal | IEEE Transactions on Electron Devices |
Date of Publication | 2012-12-01 |
Volume | 59 |
Issue | 12 |
起迄頁 | 3179 |
起迄頁 | 3185 |
總頁數 | 7 |
Chinese name | Jyh-Ling Lin |
English name | Jyh-Ling Lin |
Authors | Jyh-Ling Lin,Lan-Wei Wen |
Number of authors | 2 |
作者型態 | First Author / Corresponding Author |
Language | 英文 |