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| Academic Year | 2012 |
|---|---|
| Journal Ranking | SCI |
| Title of paper | Design, Simulation and Fabrication of metal-Oxide Semiconductor Field Effect Transistor （MOSFET） with New Termination Structure |
| Journal | IEEE Transactions on Electron Devices |
| Date of Publication | 2012-12-01 |
| Volume | 59 |
| Issue | 12 |
| 起迄頁 | 3179 |
| 起迄頁 | 3185 |
| 總頁數 | 7 |
| Chinese name | Jyh-Ling Lin |
| English name | Jyh-Ling Lin |
| Authors | Jyh-Ling Lin,Lan-Wei Wen |
| Number of authors | 2 |
| 作者型態 | First Author / Corresponding Author |
| Language | 英文 |
