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Journal Papers
Academic Year2012
Journal RankingSCI
Title of paperDesign, Simulation and Fabrication of metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with New Termination Structure
JournalIEEE Transactions on Electron Devices
Date of Publication2012-12-01
Volume59
Issue12
起迄頁3179
起迄頁3185
總頁數7
Chinese nameJyh-Ling Lin
English nameJyh-Ling Lin
AuthorsJyh-Ling Lin,Lan-Wei Wen
Number of authors2
作者型態First Author / Corresponding Author
Language英文
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